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Siong T.K.; Mohamed M.F.P.; Baharin M.S.N.S.; Rahim A.F.A.
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Physical simulation and modeling of low ohmic contact resistivity for gallium nitride high electron mobility transistor (GaN HEMT) device
by
Siong
T.
K
.;
Mohamed
M.F.P
.;
Baharin
M.S.N
.S.;
Rahim
A.F.A
.
Published in
AIP Conference Proceedings
(2023)
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