Enhanced properties of porous GaN prepared by UV assisted electrochemical etching

Enhanced properties of porous GaN prepared by UV assisted electrochemical etching

The structural and optical properties of porous GaN films on sapphire (0001) prepared by UV assisted electrochemical etching were reported in this study. SEM micrographs indicated that the shapes of the pores for both porous samples are nearly hexagonal. As compared to the as-grown GaN films, porous...

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Published in:Advanced Materials Research
Main Author: Ainorkhilah M.; Naser M.A.; Hassan Z.; Kwong Y.F.; Bakhori S.K.M.; Yusof Y.; Siang C.L.
Format: Conference paper
Language:English
Published: 2012
Online Access:https://www.scopus.com/inward/record.uri?eid=2-s2.0-81855177306&doi=10.4028%2fwww.scientific.net%2fAMR.364.90&partnerID=40&md5=83bd4fd0b4ade062560df3b7c94f9a80
id 2-s2.0-81855177306
spelling 2-s2.0-81855177306
Ainorkhilah M.; Naser M.A.; Hassan Z.; Kwong Y.F.; Bakhori S.K.M.; Yusof Y.; Siang C.L.
Enhanced properties of porous GaN prepared by UV assisted electrochemical etching
2012
Advanced Materials Research
364

10.4028/www.scientific.net/AMR.364.90
https://www.scopus.com/inward/record.uri?eid=2-s2.0-81855177306&doi=10.4028%2fwww.scientific.net%2fAMR.364.90&partnerID=40&md5=83bd4fd0b4ade062560df3b7c94f9a80
The structural and optical properties of porous GaN films on sapphire (0001) prepared by UV assisted electrochemical etching were reported in this study. SEM micrographs indicated that the shapes of the pores for both porous samples are nearly hexagonal. As compared to the as-grown GaN films, porous layers exhibit a substantial photoluminescence (PL) intensity enhancement with red-shifted band-edge PL peaks associated with the relaxation of compressive stress. The shift of E2(high) to the lower frequency in Raman spectra of the porous GaN films further confirms such a stress relaxation.

10226680
English
Conference paper
author Ainorkhilah M.; Naser M.A.; Hassan Z.; Kwong Y.F.; Bakhori S.K.M.; Yusof Y.; Siang C.L.
spellingShingle Ainorkhilah M.; Naser M.A.; Hassan Z.; Kwong Y.F.; Bakhori S.K.M.; Yusof Y.; Siang C.L.
Enhanced properties of porous GaN prepared by UV assisted electrochemical etching
author_facet Ainorkhilah M.; Naser M.A.; Hassan Z.; Kwong Y.F.; Bakhori S.K.M.; Yusof Y.; Siang C.L.
author_sort Ainorkhilah M.; Naser M.A.; Hassan Z.; Kwong Y.F.; Bakhori S.K.M.; Yusof Y.; Siang C.L.
title Enhanced properties of porous GaN prepared by UV assisted electrochemical etching
title_short Enhanced properties of porous GaN prepared by UV assisted electrochemical etching
title_full Enhanced properties of porous GaN prepared by UV assisted electrochemical etching
title_fullStr Enhanced properties of porous GaN prepared by UV assisted electrochemical etching
title_full_unstemmed Enhanced properties of porous GaN prepared by UV assisted electrochemical etching
title_sort Enhanced properties of porous GaN prepared by UV assisted electrochemical etching
publishDate 2012
container_title Advanced Materials Research
container_volume 364
container_issue
doi_str_mv 10.4028/www.scientific.net/AMR.364.90
url https://www.scopus.com/inward/record.uri?eid=2-s2.0-81855177306&doi=10.4028%2fwww.scientific.net%2fAMR.364.90&partnerID=40&md5=83bd4fd0b4ade062560df3b7c94f9a80
description The structural and optical properties of porous GaN films on sapphire (0001) prepared by UV assisted electrochemical etching were reported in this study. SEM micrographs indicated that the shapes of the pores for both porous samples are nearly hexagonal. As compared to the as-grown GaN films, porous layers exhibit a substantial photoluminescence (PL) intensity enhancement with red-shifted band-edge PL peaks associated with the relaxation of compressive stress. The shift of E2(high) to the lower frequency in Raman spectra of the porous GaN films further confirms such a stress relaxation.
publisher
issn 10226680
language English
format Conference paper
accesstype
record_format scopus
collection Scopus
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