I-V and surface topography study of nanostructure porous silicon layer prepared by electrochemical etching
This article reports on the electrical properties of porous silicon nanostructures (PSiNs) in term of its surface topography. In this study, the PsiNs samples were prepared by using different current density during the electrochemical etching of p-type silicon wafer. PSiNs has been investigated its...
| Published in: | Advanced Materials Research |
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| Main Author: | |
| Format: | Conference paper |
| Language: | English |
| Published: |
2012
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| Online Access: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-84869380229&doi=10.4028%2fwww.scientific.net%2fAMR.576.519&partnerID=40&md5=79652061bec1aebbac779423ffaa202d |
| Summary: | This article reports on the electrical properties of porous silicon nanostructures (PSiNs) in term of its surface topography. In this study, the PsiNs samples were prepared by using different current density during the electrochemical etching of p-type silicon wafer. PSiNs has been investigated its electrical properties and resistances for different surface topography of PSiNs via current-voltage (I-V) measurement system (Keithley 2400) while its physical structural properties was investigated by using atomic force microscopy (AFM-XE100). © (2012) Trans Tech Publications, Switzerland. |
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| ISSN: | 10226680 |
| DOI: | 10.4028/www.scientific.net/AMR.576.519 |