I-V and surface topography study of nanostructure porous silicon layer prepared by electrochemical etching

I-V and surface topography study of nanostructure porous silicon layer prepared by electrochemical etching

This article reports on the electrical properties of porous silicon nanostructures (PSiNs) in term of its surface topography. In this study, the PsiNs samples were prepared by using different current density during the electrochemical etching of p-type silicon wafer. PSiNs has been investigated its...

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Published in:Advanced Materials Research
Main Author: Husairi F.S.; Ain Zubaidah M.; Yusop S.F.M.; Rusop M.; Abdullah S.
Format: Conference paper
Language:English
Published: 2012
Online Access:https://www.scopus.com/inward/record.uri?eid=2-s2.0-84869380229&doi=10.4028%2fwww.scientific.net%2fAMR.576.519&partnerID=40&md5=79652061bec1aebbac779423ffaa202d
id 2-s2.0-84869380229
spelling 2-s2.0-84869380229
Husairi F.S.; Ain Zubaidah M.; Yusop S.F.M.; Rusop M.; Abdullah S.
I-V and surface topography study of nanostructure porous silicon layer prepared by electrochemical etching
2012
Advanced Materials Research
576

10.4028/www.scientific.net/AMR.576.519
https://www.scopus.com/inward/record.uri?eid=2-s2.0-84869380229&doi=10.4028%2fwww.scientific.net%2fAMR.576.519&partnerID=40&md5=79652061bec1aebbac779423ffaa202d
This article reports on the electrical properties of porous silicon nanostructures (PSiNs) in term of its surface topography. In this study, the PsiNs samples were prepared by using different current density during the electrochemical etching of p-type silicon wafer. PSiNs has been investigated its electrical properties and resistances for different surface topography of PSiNs via current-voltage (I-V) measurement system (Keithley 2400) while its physical structural properties was investigated by using atomic force microscopy (AFM-XE100). © (2012) Trans Tech Publications, Switzerland.

10226680
English
Conference paper
author Husairi F.S.; Ain Zubaidah M.; Yusop S.F.M.; Rusop M.; Abdullah S.
spellingShingle Husairi F.S.; Ain Zubaidah M.; Yusop S.F.M.; Rusop M.; Abdullah S.
I-V and surface topography study of nanostructure porous silicon layer prepared by electrochemical etching
author_facet Husairi F.S.; Ain Zubaidah M.; Yusop S.F.M.; Rusop M.; Abdullah S.
author_sort Husairi F.S.; Ain Zubaidah M.; Yusop S.F.M.; Rusop M.; Abdullah S.
title I-V and surface topography study of nanostructure porous silicon layer prepared by electrochemical etching
title_short I-V and surface topography study of nanostructure porous silicon layer prepared by electrochemical etching
title_full I-V and surface topography study of nanostructure porous silicon layer prepared by electrochemical etching
title_fullStr I-V and surface topography study of nanostructure porous silicon layer prepared by electrochemical etching
title_full_unstemmed I-V and surface topography study of nanostructure porous silicon layer prepared by electrochemical etching
title_sort I-V and surface topography study of nanostructure porous silicon layer prepared by electrochemical etching
publishDate 2012
container_title Advanced Materials Research
container_volume 576
container_issue
doi_str_mv 10.4028/www.scientific.net/AMR.576.519
url https://www.scopus.com/inward/record.uri?eid=2-s2.0-84869380229&doi=10.4028%2fwww.scientific.net%2fAMR.576.519&partnerID=40&md5=79652061bec1aebbac779423ffaa202d
description This article reports on the electrical properties of porous silicon nanostructures (PSiNs) in term of its surface topography. In this study, the PsiNs samples were prepared by using different current density during the electrochemical etching of p-type silicon wafer. PSiNs has been investigated its electrical properties and resistances for different surface topography of PSiNs via current-voltage (I-V) measurement system (Keithley 2400) while its physical structural properties was investigated by using atomic force microscopy (AFM-XE100). © (2012) Trans Tech Publications, Switzerland.
publisher
issn 10226680
language English
format Conference paper
accesstype
record_format scopus
collection Scopus
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