I-V and surface topography study of nanostructure porous silicon layer prepared by electrochemical etching

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I-V and surface topography study of nanostructure porous silicon layer prepared by electrochemical etching

This article reports on the electrical properties of porous silicon nanostructures (PSiNs) in term of its surface topography. In this study, the PsiNs samples were prepared by using different current density during the electrochemical etching of p-type silicon wafer. PSiNs has been investigated its...

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Bibliographic Details
Published in:	Advanced Materials Research
Main Author:	Husairi F.S.; Ain Zubaidah M.; Yusop S.F.M.; Rusop M.; Abdullah S.
Format:	Conference paper
Language:	English
Published:	2012
Online Access:	https://www.scopus.com/inward/record.uri?eid=2-s2.0-84869380229&doi=10.4028%2fwww.scientific.net%2fAMR.576.519&partnerID=40&md5=79652061bec1aebbac779423ffaa202d

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