Fabrication of Flexible Au/ZnO/ITO/PET Memristor Using Dilute Electrodeposition Method
DRAM has been approaching its maximum physical limit due to the demand of smaller size and higher capacity memory resistor. The researchers have discovered the abilities of a memristor, a Non Volatile Memory (NVM) that could overcome the size and capacity obstacles. This paper discussed about the de...
| Published in: | IOP Conference Series: Materials Science and Engineering |
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| Main Author: | |
| Format: | Conference paper |
| Language: | English |
| Published: |
Institute of Physics Publishing
2015
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| Online Access: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-84960865692&doi=10.1088%2f1757-899X%2f99%2f1%2f012002&partnerID=40&md5=bc97d3d7319cd2f978e648b4121c0a23 |