Effects of annealing temperature on P3HT: Graphene thin film characterization

• Published in: Proceedings of the 2017 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2017
• Main Author: Bt Mohd Shariff N.S.; Binti Mohamad Saad P.S.
• Format: Conference paper
• Language: English
• Published: Institute of Electrical and Electronics Engineers Inc. 2017
• Online Access: https://www.scopus.com/inward/record.uri?eid=2-s2.0-85039940234&doi=10.1109%2fRSM.2017.8069161&partnerID=40&md5=26f73a5ed6c225fb952147f6345279df

Organic photovoltaic (OPV) is now well researched in the photovoltaic field due to the discovery on conjugated polymer and bulk-heterojunction. The only problem with organic photovoltaic is that its low power conversion efficiency due to low photocurrent. Photocurrent is mainly effected by electrical mobility and also the device's thickness. A polymer call is a well used in organic photovoltaic but since it's a p-type material, it is low in electron mobility. In order to increase the mobility, a material that is high in electron mobility such as Graphene is added and mixed with Poly (3-hexylthiophene) (P3HT). The main objective of this research is to study the effect of annealing temperature towards P3HT:Graphene thin film. Spin coating technique was used to fabricated the active layer onto the substrate. Characterization such as optical properties, surface morphology and electrical characterization is being measured and studied. Optimum annealing temperature for P3HT:Graphene device fabrication is obtain at 200°C due to its high absorbance and roughness. XRD results shows that annealing over 200°C can shift the crystallinity of P3HT. © 2017 IEEE.