Structural, optical, and electrical properties of Ni-doped ZnO nanorod arrays prepared via sonicated sol-gel immersion method

Nickel (Ni)-doped zinc oxide (ZnO) nanorod array films were synthesised using sonicated sol-gel immersion method. The FESEM images showed that the Ni-doped ZnO nanorod arrays possess hexagonal shape with average diameter about 120 nm and thickness about 1.10 μm. The Ni-doped ZnO nanorod arrays posse...

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Published in:AIP Conference Proceedings
Main Author: Ismail A.S.; Mamat M.H.; Malek M.F.; Saidi S.A.; Yusoff M.M.; Mohamed R.; Sin N.D.M.; Suriani A.B.; Rusop M.
Format: Conference paper
Language:English
Published: American Institute of Physics Inc. 2018
Online Access:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85047327507&doi=10.1063%2f1.5036875&partnerID=40&md5=d8866574b13c74e0fedb9b36ae41844f
id 2-s2.0-85047327507
spelling 2-s2.0-85047327507
Ismail A.S.; Mamat M.H.; Malek M.F.; Saidi S.A.; Yusoff M.M.; Mohamed R.; Sin N.D.M.; Suriani A.B.; Rusop M.
Structural, optical, and electrical properties of Ni-doped ZnO nanorod arrays prepared via sonicated sol-gel immersion method
2018
AIP Conference Proceedings
1963

10.1063/1.5036875
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85047327507&doi=10.1063%2f1.5036875&partnerID=40&md5=d8866574b13c74e0fedb9b36ae41844f
Nickel (Ni)-doped zinc oxide (ZnO) nanorod array films were synthesised using sonicated sol-gel immersion method. The FESEM images showed that the Ni-doped ZnO nanorod arrays possess hexagonal shape with average diameter about 120 nm and thickness about 1.10 μm. The Ni-doped ZnO nanorod arrays possess better transmittance properties with 3.27 eV of optical band gap energy and 40 meV of urbach energy. The current-voltage (I-V) measurement indicated that the conductivity of ZnO film slightly improved with Ni-doping. The doped film displayed good humidity sensing performance with sensitivity of 1.21. © 2018 Author(s).
American Institute of Physics Inc.
0094243X
English
Conference paper

author Ismail A.S.; Mamat M.H.; Malek M.F.; Saidi S.A.; Yusoff M.M.; Mohamed R.; Sin N.D.M.; Suriani A.B.; Rusop M.
spellingShingle Ismail A.S.; Mamat M.H.; Malek M.F.; Saidi S.A.; Yusoff M.M.; Mohamed R.; Sin N.D.M.; Suriani A.B.; Rusop M.
Structural, optical, and electrical properties of Ni-doped ZnO nanorod arrays prepared via sonicated sol-gel immersion method
author_facet Ismail A.S.; Mamat M.H.; Malek M.F.; Saidi S.A.; Yusoff M.M.; Mohamed R.; Sin N.D.M.; Suriani A.B.; Rusop M.
author_sort Ismail A.S.; Mamat M.H.; Malek M.F.; Saidi S.A.; Yusoff M.M.; Mohamed R.; Sin N.D.M.; Suriani A.B.; Rusop M.
title Structural, optical, and electrical properties of Ni-doped ZnO nanorod arrays prepared via sonicated sol-gel immersion method
title_short Structural, optical, and electrical properties of Ni-doped ZnO nanorod arrays prepared via sonicated sol-gel immersion method
title_full Structural, optical, and electrical properties of Ni-doped ZnO nanorod arrays prepared via sonicated sol-gel immersion method
title_fullStr Structural, optical, and electrical properties of Ni-doped ZnO nanorod arrays prepared via sonicated sol-gel immersion method
title_full_unstemmed Structural, optical, and electrical properties of Ni-doped ZnO nanorod arrays prepared via sonicated sol-gel immersion method
title_sort Structural, optical, and electrical properties of Ni-doped ZnO nanorod arrays prepared via sonicated sol-gel immersion method
publishDate 2018
container_title AIP Conference Proceedings
container_volume 1963
container_issue
doi_str_mv 10.1063/1.5036875
url https://www.scopus.com/inward/record.uri?eid=2-s2.0-85047327507&doi=10.1063%2f1.5036875&partnerID=40&md5=d8866574b13c74e0fedb9b36ae41844f
description Nickel (Ni)-doped zinc oxide (ZnO) nanorod array films were synthesised using sonicated sol-gel immersion method. The FESEM images showed that the Ni-doped ZnO nanorod arrays possess hexagonal shape with average diameter about 120 nm and thickness about 1.10 μm. The Ni-doped ZnO nanorod arrays possess better transmittance properties with 3.27 eV of optical band gap energy and 40 meV of urbach energy. The current-voltage (I-V) measurement indicated that the conductivity of ZnO film slightly improved with Ni-doping. The doped film displayed good humidity sensing performance with sensitivity of 1.21. © 2018 Author(s).
publisher American Institute of Physics Inc.
issn 0094243X
language English
format Conference paper
accesstype
record_format scopus
collection Scopus
_version_ 1809677602840903680