Electroresistance effect due to mo substitution at mn-site in monovalent doped la0.85ag0.15mn1-xmoxo3 (x = 0.00 and 0.05) manganites

• Published in: Solid State Phenomena
• Main Author: Muhammad Syazwan M.S.; Nur Ain Athirah C.A.; Norazila I.
• Format: Conference paper
• Language: English
• Published: Trans Tech Publications Ltd 2021
• Online Access: https://www.scopus.com/inward/record.uri?eid=2-s2.0-85120524777&doi=10.4028%2fwww.scientific.net%2fSSP.317.17&partnerID=40&md5=6750ee1637f987118b0386142e86bba8

The electroresistance, ER effect of La0.85Ag0.15Mn1-xMoxO3 (x = 0.00 and 0.05) samples prepared using solid method are investigated. The increased of applied current from 5 mA to 10 mA does not change the metal-insulator transition temperature, TMI for both samples however decreased the resistivity in the temperature region of 50 K – 300 K. Both samples exhibit large ER effect at low temperature region. At TMI, the ER value is 75.5% (x =0) and decrease to 34.15% (x = 0.05). However, at 300 K, the value of ER increases to 57 % for Mo substituted sample, and the value decreases to 6.4% for the x =0 sample. The enhanced ER effect at 300 K may be due to the growth of conductive filaments under increased applied current. The increase of applied current may perturb the arrangement of magnetic inhomogeneity induced by Mo substitution, result in reduction of resistivity and lead to the observation of ER effect. These findings suggest potential application of La0.85Ag0.15Mn1-xMoxO3 (x = 0.05) in spintronic devices. © 2021 Trans Tech Publications Ltd, Switzerland.