Physical simulation and modeling of low ohmic contact resistivity for gallium nitride high electron mobility transistor (GaN HEMT) device
Recent research has led to Gallium Nitride (GaN) as promising material, enhancing properties like higher operational temperature, smaller dimension, faster operation, and efficient performance. As metal contact on the semiconductor is essential to provide the HEMT's device external connection,...
| Published in: | AIP Conference Proceedings |
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| Main Author: | |
| Format: | Conference paper |
| Language: | English |
| Published: |
American Institute of Physics Inc.
2023
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| Online Access: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85178037643&doi=10.1063%2f5.0122499&partnerID=40&md5=c0c240ca4a08b244aee3e68dc829ab49 |