Anodized porous silicon based humidity sensor: evaluation of material characteristics and sensor performance of AU/PSIO2/AU

Porous silicon (PSi) has received a lot of attention in nanotechnology research in recent years for its potential use as sensing layers in sensor application. However, there have been relatively limited studies concerning the effect of varying contact gaps and bias voltages on the humidity sensor ba...

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Published in:Journal of Porous Materials
Main Author: Wan Ahmad Aziz W.N.S.; Abdul Rani R.; Ngadiman N.L.S.; Ismail M.F.; Zoolfakar A.S.
Format: Article
Language:English
Published: Springer 2024
Online Access:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85189784154&doi=10.1007%2fs10934-024-01610-y&partnerID=40&md5=8b7a83f603aab87c2616fe63a4ca3fd5
id 2-s2.0-85189784154
spelling 2-s2.0-85189784154
Wan Ahmad Aziz W.N.S.; Abdul Rani R.; Ngadiman N.L.S.; Ismail M.F.; Zoolfakar A.S.
Anodized porous silicon based humidity sensor: evaluation of material characteristics and sensor performance of AU/PSIO2/AU
2024
Journal of Porous Materials
31
4
10.1007/s10934-024-01610-y
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85189784154&doi=10.1007%2fs10934-024-01610-y&partnerID=40&md5=8b7a83f603aab87c2616fe63a4ca3fd5
Porous silicon (PSi) has received a lot of attention in nanotechnology research in recent years for its potential use as sensing layers in sensor application. However, there have been relatively limited studies concerning the effect of varying contact gaps and bias voltages on the humidity sensor based on PSi. In this work, the nanostructure PSi layer was synthesized via the anodization method and fabricated at different annealing temperatures of 250 ℃, 450 ℃, 650 ℃, and 850 ℃. Subsequently, the four samples were deposited with varying gold (Au) contact gaps of 3.5 mm, 4.5 mm, 7.5 mm, and 8.5 mm. The morphological and structural characteristics of the PSi layer were characterized using scanning electron microscopy (SEM) and X-ray diffraction (XRD) analysis. The PSi-based humidity sensors with varied Au contact gaps were evaluated in a humidity chamber at 40–90% relative humidity (RH) levels with different bias voltages of 2 V, 5 V, and 10 V. The optimized fabricated PSi device was evaluated for its electrical behaviour using I-V measurement under various operating temperatures ranging from 25 °C to 100 °C. The findings showed that the enhanced PSi structure of the 450 °C annealed sensor produced the highest sensitivity performance of 18.4705 µA/%RH with stable output at a contact gap of 4.5 mm and a bias voltage of 10 V. The sensor exhibited a high surface area to volume ratio, which facilitated efficient interactions between surface active sites and water molecules, resulting in a highly sensitive humidity sensor. © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2024.
Springer
13802224
English
Article

author Wan Ahmad Aziz W.N.S.; Abdul Rani R.; Ngadiman N.L.S.; Ismail M.F.; Zoolfakar A.S.
spellingShingle Wan Ahmad Aziz W.N.S.; Abdul Rani R.; Ngadiman N.L.S.; Ismail M.F.; Zoolfakar A.S.
Anodized porous silicon based humidity sensor: evaluation of material characteristics and sensor performance of AU/PSIO2/AU
author_facet Wan Ahmad Aziz W.N.S.; Abdul Rani R.; Ngadiman N.L.S.; Ismail M.F.; Zoolfakar A.S.
author_sort Wan Ahmad Aziz W.N.S.; Abdul Rani R.; Ngadiman N.L.S.; Ismail M.F.; Zoolfakar A.S.
title Anodized porous silicon based humidity sensor: evaluation of material characteristics and sensor performance of AU/PSIO2/AU
title_short Anodized porous silicon based humidity sensor: evaluation of material characteristics and sensor performance of AU/PSIO2/AU
title_full Anodized porous silicon based humidity sensor: evaluation of material characteristics and sensor performance of AU/PSIO2/AU
title_fullStr Anodized porous silicon based humidity sensor: evaluation of material characteristics and sensor performance of AU/PSIO2/AU
title_full_unstemmed Anodized porous silicon based humidity sensor: evaluation of material characteristics and sensor performance of AU/PSIO2/AU
title_sort Anodized porous silicon based humidity sensor: evaluation of material characteristics and sensor performance of AU/PSIO2/AU
publishDate 2024
container_title Journal of Porous Materials
container_volume 31
container_issue 4
doi_str_mv 10.1007/s10934-024-01610-y
url https://www.scopus.com/inward/record.uri?eid=2-s2.0-85189784154&doi=10.1007%2fs10934-024-01610-y&partnerID=40&md5=8b7a83f603aab87c2616fe63a4ca3fd5
description Porous silicon (PSi) has received a lot of attention in nanotechnology research in recent years for its potential use as sensing layers in sensor application. However, there have been relatively limited studies concerning the effect of varying contact gaps and bias voltages on the humidity sensor based on PSi. In this work, the nanostructure PSi layer was synthesized via the anodization method and fabricated at different annealing temperatures of 250 ℃, 450 ℃, 650 ℃, and 850 ℃. Subsequently, the four samples were deposited with varying gold (Au) contact gaps of 3.5 mm, 4.5 mm, 7.5 mm, and 8.5 mm. The morphological and structural characteristics of the PSi layer were characterized using scanning electron microscopy (SEM) and X-ray diffraction (XRD) analysis. The PSi-based humidity sensors with varied Au contact gaps were evaluated in a humidity chamber at 40–90% relative humidity (RH) levels with different bias voltages of 2 V, 5 V, and 10 V. The optimized fabricated PSi device was evaluated for its electrical behaviour using I-V measurement under various operating temperatures ranging from 25 °C to 100 °C. The findings showed that the enhanced PSi structure of the 450 °C annealed sensor produced the highest sensitivity performance of 18.4705 µA/%RH with stable output at a contact gap of 4.5 mm and a bias voltage of 10 V. The sensor exhibited a high surface area to volume ratio, which facilitated efficient interactions between surface active sites and water molecules, resulting in a highly sensitive humidity sensor. © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2024.
publisher Springer
issn 13802224
language English
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