Numerical study on the optimisation of AlGaN-based deep ultra-violet light emitting diodes single quantum wells
Solid-state ultra-violet light emitting diodes (UV-LEDs) based on aluminium gallium nitride (AlGaN) semiconductors have drawn considerable attention because their energy can be tuned from 3.4 eV (GaN) to 6.2 eV (AlN) by changing Al content. Subsequently, AlGaN-based UV-LEDs with a full wavelength co...
| الحاوية / القاعدة: | International Journal of Nanotechnology |
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| المؤلف الرئيسي: | |
| التنسيق: | مقال |
| اللغة: | English |
| منشور في: |
Inderscience Publishers
2024
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| الوصول للمادة أونلاين: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85206199847&doi=10.1504%2fIJNT.2024.141765&partnerID=40&md5=101fde83fdb285172992e05830d360c5 |