RF characterization of Mg 0.2Zn 0.8O thin film capacitors for MMIC applications

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RF characterization of Mg 0.2Zn 0.8O thin film capacitors for MMIC applications

Mg 0.2Zn 0.8O thin films are proposed as a new dielectric material for monolithic microwave integrated circuit (MMIC) to replace current dielectric materials due to its high permittivity which can lead to size reduction, in addition to being compatible with semiconductor processing. In this work, Mg...

書誌詳細
出版年:	2011 IEEE International RF and Microwave Conference, RFM 2011 - Proceedings
第一著者:	2-s2.0-84859984277
フォーマット:	Conference paper
言語:	English
出版事項:	2011
オンライン･アクセス:	https://www.scopus.com/inward/record.uri?eid=2-s2.0-84859984277&doi=10.1109%2fRFM.2011.6168781&partnerID=40&md5=b8851592d0b65d08ab0154f90adc9010

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