RF characterization of Mg 0.2Zn 0.8O thin film capacitors for MMIC applications
Mg 0.2Zn 0.8O thin films are proposed as a new dielectric material for monolithic microwave integrated circuit (MMIC) to replace current dielectric materials due to its high permittivity which can lead to size reduction, in addition to being compatible with semiconductor processing. In this work, Mg...
| الحاوية / القاعدة: | 2011 IEEE International RF and Microwave Conference, RFM 2011 - Proceedings |
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| المؤلف الرئيسي: | |
| التنسيق: | Conference paper |
| اللغة: | English |
| منشور في: |
2011
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| الوصول للمادة أونلاين: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-84859984277&doi=10.1109%2fRFM.2011.6168781&partnerID=40&md5=b8851592d0b65d08ab0154f90adc9010 |