RF characterization of Mg 0.2Zn 0.8O thin film capacitors for MMIC applications
Mg 0.2Zn 0.8O thin films are proposed as a new dielectric material for monolithic microwave integrated circuit (MMIC) to replace current dielectric materials due to its high permittivity which can lead to size reduction, in addition to being compatible with semiconductor processing. In this work, Mg...
| 出版年: | 2011 IEEE International RF and Microwave Conference, RFM 2011 - Proceedings |
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| 第一著者: | |
| フォーマット: | Conference paper |
| 言語: | English |
| 出版事項: |
2011
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| オンライン･アクセス: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-84859984277&doi=10.1109%2fRFM.2011.6168781&partnerID=40&md5=b8851592d0b65d08ab0154f90adc9010 |