Hexagonal Enhanced Porous GaN with Delayed Integrated Pulse Electrochemical (iPEC) Etching

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Hexagonal Enhanced Porous GaN with Delayed Integrated Pulse Electrochemical (iPEC) Etching

This present study investigates the effect of time delay (Td) d ) on the formation of porous GaN (P-GaN) using integrated pulse electrochemical (iPEC) etching. Porous GaN (P-GaN) was formed by etching an N-type GaN wafer with a 4% KOH electrolyte for 60 minutes under an ultraviolet (UV) lamp at a cu...

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Bibliographic Details
Published in:	INTERNATIONAL JOURNAL OF NANOELECTRONICS AND MATERIALS
Main Authors:	Razali, Nurul Syuhadah Mohd; Abd Rahim, Alhan Farhanah; Hassan, Nur Sabrina Mohd; Radzali, Rosfariza; Mahmood, Ainorkhilah; Sabki, Syarifah Norfaezah; Hamzah, Irni Hamiza; Idris, Mohaiyedin; Mohamed, Mohamed Fauzi Packeer
Format:	Article
Language:	English
Published:	UNIMAP PRESS 2024
Subjects:	Materials Science
Online Access:	https://www-webofscience-com.uitm.idm.oclc.org/wos/woscc/full-record/WOS:001343346700005

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