Tailoring structure, optical absorption, and dielectric performance in Mn-doped La2NiRu1-xMnxO6 double perovskites

This study delves into the structural, optical, and dielectric characteristics of Mn-doped La2NiRu1-xMnxO6 (x = 0.00, 0.02, 0.04, 0.06, 0.08, and 0.10) double perovskites, synthesized using a solid-state reaction method. X-ray diffraction (XRD) results revealed that adding Mn leads to changes in the...

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書誌詳細
出版年:MATERIALS RESEARCH BULLETIN
主要な著者: Rafie, M. S. M.; Mahat, A. M.; Halizan, M. Z. M.; Mohamed, Z.
フォーマット: 論文
言語:English
出版事項: PERGAMON-ELSEVIER SCIENCE LTD 2025
主題:
オンライン・アクセス:https://www-webofscience-com.uitm.idm.oclc.org/wos/woscc/full-record/WOS:001437217900001
その他の書誌記述
要約:This study delves into the structural, optical, and dielectric characteristics of Mn-doped La2NiRu1-xMnxO6 (x = 0.00, 0.02, 0.04, 0.06, 0.08, and 0.10) double perovskites, synthesized using a solid-state reaction method. X-ray diffraction (XRD) results revealed that adding Mn leads to changes in the crystal structure, causing lattice distortions indicated that all samples possess a monoclinic unit cell in the P21/n space group. FTIR spectroscopy confirmed the formation of Ni-O-Ru and Ni-O-Mn bonds confirming the molecular bands on the perovskite oxide structure for all samples, which significantly influence the material's optical and dielectric performance. As the level of Mn doping increased, the band gap values decrease gradually, enhancing the material's light absorption capabilities and making it a strong candidate for optoelectronic applications. Additionally, dielectric analysis showed that Mn incorporation improved both polarization and dielectric constants, suggesting potential for use in capacitors and energy storage devices. Overall, this research highlights how Mn doping not only impacts the structural stability of La2NiRu1-xMnxO6 (x = 0.00, 0.02, 0.04, 0.06, 0.08, and 0.10) but also allows for the precise adjustment of its optical and dielectric properties, expanding its potential in electronic and optoelectronic applications.
ISSN:0025-5408
1873-4227
DOI:10.1016/j.materresbull.2025.113402