PH sensing characteristics of silicon nitride thin film and silicon nitride-based ISFET sensor

• الحاوية / القاعدة: Proceedings - 2013 IEEE 4th Control and System Graduate Research Colloquium, ICSGRC 2013
• المؤلف الرئيسي: 2-s2.0-84891095439
• التنسيق: Conference paper
• اللغة: English
• منشور في: 2013
• الوصول للمادة أونلاين: https://www.scopus.com/inward/record.uri?eid=2-s2.0-84891095439&doi=10.1109%2fICSGRC.2013.6653290&partnerID=40&md5=db57d04a817d7fc9a2f09fc38497827d

The pH sensing characterizations of silicon nitride (Si3N 4) thin film, and Si3N4-based ISFET sensor were discussed in this paper. The Si3N4 thin film was fabricated with to form silicon/silicon dioxide/silicon nitride (Si/SiO 2/Si3N4) structure while Si3N 4-based ISFET was fabricated and packaged as a pH sensor. Both thin film and ISFET packaged device have low pressure chemical vapor deposited silicon nitride as sensing layer. Source measure unit (SMU), the semiconductor device analyzer model Agilent B1500A and a custom made test jig was used to investigate the electrical properties for both Si3N4 thin film and Si3N4-based ISFET sensor. The measurements were carrying out in three different buffer solutions with various pH levels of 4, 7 and 10 at room temperature. The pH sensitivity of thin film and ISFET packaged device with silicon nitride were 66.9 mV/pH and 53.6 mV/pH respectively. Both have shown good linearity in chosen pH range. © 2013 IEEE.