Impact of Nanowire Radius and Channel Thickness with High-k Gate Dielectric in GAA-JLT

by Vespanathan, Nilaventhiran; Othman, Noraini; Sabki, S. N.; Abd Rahim, Alhan Farhanah
Published in INTERNATIONAL JOURNAL OF NANOELECTRONICS AND MATERIALS (2023)

Wide Bandgap SiC-Based Oxide Thickness Optimization by Computation and Simulation using Enhanced Electron Mobility with Regulated Gate Voltage Technique for High-Power 4H-SiC MOSFE...

by Poobalan, Banu; Hashim, Nuralia Syahida; Natarajan, Manikandan; Rahim, Alhan Farhanah Abd
Published in JOURNAL OF ENGINEERING AND TECHNOLOGICAL SCIENCES (2024)

Analytical Modeling of Depletion-Mode MOSHEMT Device for High- Temperature Applications

by Islam, Naeemul; Packeer Mohamed, Mohamed Fauzi; Ahmad, Norhawati; Isa, Muammar Mohamad; Rahim, Alhan Farhanah Abd; Ahmeda, Khaled
Published in IEEE ACCESS (2024)

Enhancement of Structural and Optical Characteristics of Nanostructured InGaN Using Electrochemical Etching

by Daud, Anis Nabilah Mohd; Radzali, Rosfariza; Mahmood, Ainorkhilah; Hassan, Zainuriah; Rahim, Alhan Farhanah Abd; Malik, Muhammad Fadhirul Izwan Abdul; Abdullah, Mohd Hanapiah; Noorsal, Emilia
Published in INTERNATIONAL JOURNAL OF NANOELECTRONICS AND MATERIALS (2023)