Performance Analysis of 14nm SOI-based Trigate Gaussian Channel Junctionless FinFET with Punchthrough Stop Layer

Performance Analysis of 14nm SOI-based Trigate Gaussian Channel Junctionless FinFET with Punchthrough Stop Layer

In this paper, 14nm Silicon-On-Insulator-based Gaussian Channel Junctionless FinFET is presented. The gate length of 14nm is considered along with an Equivalent Oxide Thickness (EOT) of 1nm, 5nm as fin width, and the work function of the gate metal is 4.75eV. The device architecture has a non-unifor...

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Bibliographic Details
Published in:Proceedings - 2023 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2023
Main Author: Ramakrishnan M.; Alias N.E.; Tan M.L.P.; Hamzah A.; Wahab Y.A.; Hussin H.
Format: Conference paper
Language:English
Published: Institute of Electrical and Electronics Engineers Inc. 2023
Online Access:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85179845941&doi=10.1109%2fRSM59033.2023.10326895&partnerID=40&md5=0c9e76fbbf43e365dc6276495f3618a1

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https://www.scopus.com/inward/record.uri?eid=2-s2.0-85179845941&doi=10.1109%2fRSM59033.2023.10326895&partnerID=40&md5=0c9e76fbbf43e365dc6276495f3618a1

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