Simulation and analysis of solar cells based on InN/p-Si: influence on thickness, doping concentration, and temperature dependence
The current research project intends to enhance solar cells' power and conversion efficiency based on InN/p-Si utilizing the PC1D simulator. A broad direct bandgap of Indium nitride (0.65 eV) makes it suitable for various applications. The InN-based solar cells show an excellent candidate for g...
| Published in: | International Journal of Nanoelectronics and Materials |
|---|---|
| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Universiti Malaysia Perlis
2024
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| Online Access: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85202913816&doi=10.58915%2fijneam.v17i3.1164&partnerID=40&md5=8cc4439277f34adf065d90ef31274b23 |