A simulation based study on C-V characteristics of oxide thickness for NMOS
This paper report the Capacitance-Voltage (C-V) characterization of gate oxide in the ±10 nm thickness range. The project being done by using SILVACO TCAD software of using ATHENA and ATLAS simulator in order to fabricate the NMOS. To determine the gate oxide thickness, temperature, Asid Hydrocloric...
| 发表在: | 2010 International Conference on Electronic Devices, Systems and Applications, ICEDSA 2010 - Proceedings |
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| 格式: | Conference paper |
| 语言: | English |
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2010
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| 在线阅读: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-77955286329&doi=10.1109%2fICEDSA.2010.5503030&partnerID=40&md5=a00d85f008b0014dc8d2a795210b979e |
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Abdul Aziz A.; Osman S.S. |
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Abdul Aziz A.; Osman S.S. 2-s2.0-77955286329 A simulation based study on C-V characteristics of oxide thickness for NMOS 2010 2010 International Conference on Electronic Devices, Systems and Applications, ICEDSA 2010 - Proceedings 10.1109/ICEDSA.2010.5503030 https://www.scopus.com/inward/record.uri?eid=2-s2.0-77955286329&doi=10.1109%2fICEDSA.2010.5503030&partnerID=40&md5=a00d85f008b0014dc8d2a795210b979e This paper report the Capacitance-Voltage (C-V) characterization of gate oxide in the ±10 nm thickness range. The project being done by using SILVACO TCAD software of using ATHENA and ATLAS simulator in order to fabricate the NMOS. To determine the gate oxide thickness, temperature, Asid Hydrocloric (HCl) % concentration and oxidation time are varies during fabrication process. The effect of the oxide thickness on C-V characteristics is presented. © 2010 IEEE. English Conference paper |
| author |
2-s2.0-77955286329 |
| spellingShingle |
2-s2.0-77955286329 A simulation based study on C-V characteristics of oxide thickness for NMOS |
| author_facet |
2-s2.0-77955286329 |
| author_sort |
2-s2.0-77955286329 |
| title |
A simulation based study on C-V characteristics of oxide thickness for NMOS |
| title_short |
A simulation based study on C-V characteristics of oxide thickness for NMOS |
| title_full |
A simulation based study on C-V characteristics of oxide thickness for NMOS |
| title_fullStr |
A simulation based study on C-V characteristics of oxide thickness for NMOS |
| title_full_unstemmed |
A simulation based study on C-V characteristics of oxide thickness for NMOS |
| title_sort |
A simulation based study on C-V characteristics of oxide thickness for NMOS |
| publishDate |
2010 |
| container_title |
2010 International Conference on Electronic Devices, Systems and Applications, ICEDSA 2010 - Proceedings |
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| container_issue |
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| doi_str_mv |
10.1109/ICEDSA.2010.5503030 |
| url |
https://www.scopus.com/inward/record.uri?eid=2-s2.0-77955286329&doi=10.1109%2fICEDSA.2010.5503030&partnerID=40&md5=a00d85f008b0014dc8d2a795210b979e |
| description |
This paper report the Capacitance-Voltage (C-V) characterization of gate oxide in the ±10 nm thickness range. The project being done by using SILVACO TCAD software of using ATHENA and ATLAS simulator in order to fabricate the NMOS. To determine the gate oxide thickness, temperature, Asid Hydrocloric (HCl) % concentration and oxidation time are varies during fabrication process. The effect of the oxide thickness on C-V characteristics is presented. © 2010 IEEE. |
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| language |
English |
| format |
Conference paper |
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| record_format |
scopus |
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Scopus |
| _version_ |
1828987884409978880 |