A simulation based study on C-V characteristics of oxide thickness for NMOS

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A simulation based study on C-V characteristics of oxide thickness for NMOS

This paper report the Capacitance-Voltage (C-V) characterization of gate oxide in the ±10 nm thickness range. The project being done by using SILVACO TCAD software of using ATHENA and ATLAS simulator in order to fabricate the NMOS. To determine the gate oxide thickness, temperature, Asid Hydrocloric...

書誌詳細
出版年:	2010 International Conference on Electronic Devices, Systems and Applications, ICEDSA 2010 - Proceedings
第一著者:	2-s2.0-77955286329
フォーマット:	Conference paper
言語:	English
出版事項:	2010
オンライン･アクセス:	https://www.scopus.com/inward/record.uri?eid=2-s2.0-77955286329&doi=10.1109%2fICEDSA.2010.5503030&partnerID=40&md5=a00d85f008b0014dc8d2a795210b979e

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