A simulation based study on C-V characteristics of oxide thickness for NMOS

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A simulation based study on C-V characteristics of oxide thickness for NMOS

This paper report the Capacitance-Voltage (C-V) characterization of gate oxide in the ±10 nm thickness range. The project being done by using SILVACO TCAD software of using ATHENA and ATLAS simulator in order to fabricate the NMOS. To determine the gate oxide thickness, temperature, Asid Hydrocloric...

وصف كامل

التفاصيل البيبلوغرافية
الحاوية / القاعدة:	2010 International Conference on Electronic Devices, Systems and Applications, ICEDSA 2010 - Proceedings
المؤلف الرئيسي:	2-s2.0-77955286329
التنسيق:	Conference paper
اللغة:	English
منشور في:	2010
الوصول للمادة أونلاين:	https://www.scopus.com/inward/record.uri?eid=2-s2.0-77955286329&doi=10.1109%2fICEDSA.2010.5503030&partnerID=40&md5=a00d85f008b0014dc8d2a795210b979e

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