APA引文

2-s2.0-70450250488. (2009). Effect of gate dielectric to the threshold voltage of 65 nm NMOS structure. AIP Conference Proceedings, 1136, . https://doi.org/10.1063/1.3160209

Chicago Style (17th ed.) Citation

2-s2.0-70450250488. "Effect of Gate Dielectric to the Threshold Voltage of 65 Nm NMOS Structure." AIP Conference Proceedings 1136 (2009). https://doi.org/10.1063/1.3160209.

MLA引文

2-s2.0-70450250488. "Effect of Gate Dielectric to the Threshold Voltage of 65 Nm NMOS Structure." AIP Conference Proceedings, vol. 1136, 2009, https://doi.org/10.1063/1.3160209.