Effect of gate dielectric to the threshold voltage of 65 nm NMOS structure

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Effect of gate dielectric to the threshold voltage of 65 nm NMOS structure

With the intention of approaching to a technology of 65 nm, many parameters were changed as a step to fabricate the device. The gate oxide thickness was one of the parameters that have been observed. In this project, Silvaco TCA D tools were used to find the optimum value of threshold voltage for 65...

書誌詳細
出版年:	AIP Conference Proceedings
第一著者:	2-s2.0-70450250488
フォーマット:	Conference paper
言語:	English
出版事項:	2009
オンライン･アクセス:	https://www.scopus.com/inward/record.uri?eid=2-s2.0-70450250488&doi=10.1063%2f1.3160209&partnerID=40&md5=b855d4a09e0f871859423c1f4e7de128

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