A simulation based study on C-V characteristics of oxide thickness for NMOS
This paper report the Capacitance-Voltage (C-V) characterization of gate oxide in the ±10 nm thickness range. The project being done by using SILVACO TCAD software of using ATHENA and ATLAS simulator in order to fabricate the NMOS. To determine the gate oxide thickness, temperature, Asid Hydrocloric...
| 出版年: | 2010 International Conference on Electronic Devices, Systems and Applications, ICEDSA 2010 - Proceedings |
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| 第一著者: | |
| フォーマット: | Conference paper |
| 言語: | English |
| 出版事項: |
2010
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| オンライン･アクセス: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-77955286329&doi=10.1109%2fICEDSA.2010.5503030&partnerID=40&md5=a00d85f008b0014dc8d2a795210b979e |
| 要約: | This paper report the Capacitance-Voltage (C-V) characterization of gate oxide in the ±10 nm thickness range. The project being done by using SILVACO TCAD software of using ATHENA and ATLAS simulator in order to fabricate the NMOS. To determine the gate oxide thickness, temperature, Asid Hydrocloric (HCl) % concentration and oxidation time are varies during fabrication process. The effect of the oxide thickness on C-V characteristics is presented. © 2010 IEEE. |
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| ISSN: | |
| DOI: | 10.1109/ICEDSA.2010.5503030 |