A simulation based study on C-V characteristics of oxide thickness for NMOS

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A simulation based study on C-V characteristics of oxide thickness for NMOS

This paper report the Capacitance-Voltage (C-V) characterization of gate oxide in the ±10 nm thickness range. The project being done by using SILVACO TCAD software of using ATHENA and ATLAS simulator in order to fabricate the NMOS. To determine the gate oxide thickness, temperature, Asid Hydrocloric...

书目详细资料
发表在:	2010 International Conference on Electronic Devices, Systems and Applications, ICEDSA 2010 - Proceedings
主要作者:	2-s2.0-77955286329
格式:	Conference paper
语言:	English
出版:	2010
在线阅读:	https://www.scopus.com/inward/record.uri?eid=2-s2.0-77955286329&doi=10.1109%2fICEDSA.2010.5503030&partnerID=40&md5=a00d85f008b0014dc8d2a795210b979e

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